j.&is.e.ii ^e.mi-l.onau.cto'i cx ij , u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon pnp power transistor 2SB996 description ? collector-emitter breakdown voltage- : v(br)ceo= -sov(min) ? good linearity of hfe ? complement to type 2sd1356 applications ? power amplifier applications. ? recommended for 20~25w high-fidelity audio frequency amplifier output stage. absolute maximum ratings(ta=25"c) symbol vcbo vceo vebo ic ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous base current-continuous collector power dissipation @tc=25'c junction temperature storage temperature value -80 -80 -5 -4 -0.4 30 150 -55-150 unit v v v a a w 'c ?c **s, 2 fih: 1 base 1 2 collector 3 knitter to-220c package j mq| a ?* v h /-i rkzrf * 4 h t h t c * it iip' i i 1 dim a b c d f g h j k l a r s u v j mm win 15.50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13.00 1.10 2.70 2.30 1.29 6.45 8.66 max 15.90 10.20 4.50 0.90 3.70 5.18 2.90 0.60 13.40 1.45 2.90 2.70 1.35 6.65 8.86 *-s n.i semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of goin hi press. i louevcr. n.i semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i seini-coiuluctors encourages customers in \crif> that datasheets are current before placing orders. quality semi-conductors
silicon pnp power transistor 2SB996 electrical characteristics tj=25'c unless otherwise specified symbol v(br)ceo vce(sat) vse(on) icbo iebo hpe-1 hpe-2 cob fr parameter collector-emitter breakdown voltage collector-emitter saturation voltage base-emitter on voltage collector cutoff current emitter cutoff current dc current gain dc current gain output capacitance current-gain?bandwidth product conditions lc= -30ma; ib= 0 lc= -3a; ib= -0.3a lc= -3a; vce= -5v vcb= -80v; ie= 0 veb= -5v; lc= 0 lc= -0.5a; vce=-5v lc= -3a; vce= -5v le=0;vcb=-10v;ftest=1mhz lc= -0.5a; vce= -5v min -80 40 15 typ. 130 9 max -1.7 -1.5 -30 -0.1 240 unit v v v u a ma pf mhz hpe-1 classifications r 40-80 o 70-140 y 120-240
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